{"title":"霍尔传感器效率的COMSOL建模","authors":"I. Ruskova, E. Gieva, V. Yantchev, M. Hristov","doi":"10.1109/ET.2017.8124384","DOIUrl":null,"url":null,"abstract":"In this paper we present a finite element analysis routine for modeling of semiconductor Hall sensors. Their efficiency is studied varying the base semiconductor material. More specifically, 2D COMSOL semi-conductor model is initially employed to extract the properties of the conductive channel. Subsequently a 3D COMSOL DC model is used to perform the studies regarding the Hall sensor efficiency. Hall sensors of identical topology and doping levels are studied in a comparative manner.","PeriodicalId":127983,"journal":{"name":"2017 XXVI International Scientific Conference Electronics (ET)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"COMSOL modeling of Hall sensors efficiency\",\"authors\":\"I. Ruskova, E. Gieva, V. Yantchev, M. Hristov\",\"doi\":\"10.1109/ET.2017.8124384\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we present a finite element analysis routine for modeling of semiconductor Hall sensors. Their efficiency is studied varying the base semiconductor material. More specifically, 2D COMSOL semi-conductor model is initially employed to extract the properties of the conductive channel. Subsequently a 3D COMSOL DC model is used to perform the studies regarding the Hall sensor efficiency. Hall sensors of identical topology and doping levels are studied in a comparative manner.\",\"PeriodicalId\":127983,\"journal\":{\"name\":\"2017 XXVI International Scientific Conference Electronics (ET)\",\"volume\":\"85 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 XXVI International Scientific Conference Electronics (ET)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ET.2017.8124384\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 XXVI International Scientific Conference Electronics (ET)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ET.2017.8124384","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper we present a finite element analysis routine for modeling of semiconductor Hall sensors. Their efficiency is studied varying the base semiconductor material. More specifically, 2D COMSOL semi-conductor model is initially employed to extract the properties of the conductive channel. Subsequently a 3D COMSOL DC model is used to perform the studies regarding the Hall sensor efficiency. Hall sensors of identical topology and doping levels are studied in a comparative manner.
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