Zr/ZrO2-NT/Au层状结构的单向类突触行为

2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology (USBEREIT) Pub Date : 2018-05-01 DOI:10.1109/USBEREIT.2018.8384620

A. Vokhmintsev, R. Kamalov, A. V. Kozhevina, I. Petrenyov, N. A. Martemyanov, I. Weinstein

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引用次数: 1

摘要

采用恒电位阳极氧化法制备了外管径为25 nm的氧化锆纳米管层。采用模板掩膜和磁控溅射技术制备了Zr/ZrO2-NT/Au记忆结构。在电阻开关的全周期内测量了施加谐波电压的不同参数的电流-电压特性。针对所研究的结构，提出了具有单向导电性的等效电路。估计忆阻器在高电阻率和中电阻率状态下的电阻。基于Zr/ZrO2-NT/Au结构的忆阻器具有较高的突触可塑性。

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Unidirectional synapse-like behavior of Zr/ZrO2-NT/Au layered structure

Zirconia nanotubular layer with an outer tube diameter « 25 nm was synthesized by potentiostatic anodization. The Zr/ZrO2-NT/Au memristive structure is fabricated using stencil mask and magnetron sputtering techniques. Current-voltage characteristics are measured in full cycles of resistive switching with varying parameters of the applied harmonic voltage. An equivalent circuit with unidirectional electrical conductivity for the studied structure is proposed. Estimates of the electrical resistance of memristors in high- and intermediate resistivity states are performed. The high synaptic plasticity of memristors based on the Zr/ZrO2-NT/Au structure is shown.

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2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology (USBEREIT)

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