偏置栅极mosfet通道长度和偏置区域长度的测量

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI:10.1109/ESSDERC.1997.194513

K. Terada, K. Tsuji, Y. Itoh, M. Takahashi

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引用次数: 0

摘要

本文提出了一种提取偏置栅极mosfet的沟道长度和偏置区域长度的方法，偏置区域长度定义为在那里形成的JFET的沟道长度。通过外推MOSFET的栅极偏置至无穷大，消除了MOSFET对JFET电流测量的影响。实验数据证实，该提取方法可以准确地确定两个通道的长度。

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Measurement of Channel Length and Off-set Region Length for Off-set Gate MOSFETs

This paper proposes an extraction method of both the channel length and the off-set region length, which is defined as the channel length of the JFET formed there, for off-set gate MOSFETs. The influence of MOSFET in the JFET current measurement is removed by extrapolating the gate bias of the MOSFET to infinity. Experimental data confirm that this extraction method can accurately determine both channel lengths.

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27th European Solid-State Device Research Conference

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