{"title":"采用硅IPD技术的紧凑型低成本5G NR n78带通滤波器","authors":"K. Shin, K. Eilert","doi":"10.1109/WAMICON.2018.8363892","DOIUrl":null,"url":null,"abstract":"A low cost and compact 1608 size Silicon integrated passive device (IPD) band pass filter design for the new 5G New Radio (NR) n78 band is discussed in this paper. Top coupled filter topology with transmission zeroes is selected to give low insertion loss (IL) < 1.8 dB in passband 3.3 ∼ 3.8 GHz, with >30dB attenuation at 2.7 GHz and 4.9 GHz. Therefore, this design can effectively filter out adjacent ISM, 5G NR n41, and WLAN bands. Model correlation is verified with Silicon IPD wafer measurements. Variation study and Flip Chip die level performance is also discussed.","PeriodicalId":193359,"journal":{"name":"2018 IEEE 19th Wireless and Microwave Technology Conference (WAMICON)","volume":"146 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":"{\"title\":\"Compact low cost 5G NR n78 band pass filter with silicon IPD technology\",\"authors\":\"K. Shin, K. Eilert\",\"doi\":\"10.1109/WAMICON.2018.8363892\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low cost and compact 1608 size Silicon integrated passive device (IPD) band pass filter design for the new 5G New Radio (NR) n78 band is discussed in this paper. Top coupled filter topology with transmission zeroes is selected to give low insertion loss (IL) < 1.8 dB in passband 3.3 ∼ 3.8 GHz, with >30dB attenuation at 2.7 GHz and 4.9 GHz. Therefore, this design can effectively filter out adjacent ISM, 5G NR n41, and WLAN bands. Model correlation is verified with Silicon IPD wafer measurements. Variation study and Flip Chip die level performance is also discussed.\",\"PeriodicalId\":193359,\"journal\":{\"name\":\"2018 IEEE 19th Wireless and Microwave Technology Conference (WAMICON)\",\"volume\":\"146 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-04-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"21\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE 19th Wireless and Microwave Technology Conference (WAMICON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WAMICON.2018.8363892\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 19th Wireless and Microwave Technology Conference (WAMICON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WAMICON.2018.8363892","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Compact low cost 5G NR n78 band pass filter with silicon IPD technology
A low cost and compact 1608 size Silicon integrated passive device (IPD) band pass filter design for the new 5G New Radio (NR) n78 band is discussed in this paper. Top coupled filter topology with transmission zeroes is selected to give low insertion loss (IL) < 1.8 dB in passband 3.3 ∼ 3.8 GHz, with >30dB attenuation at 2.7 GHz and 4.9 GHz. Therefore, this design can effectively filter out adjacent ISM, 5G NR n41, and WLAN bands. Model correlation is verified with Silicon IPD wafer measurements. Variation study and Flip Chip die level performance is also discussed.
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