HfO2/SiO2 MOS叠层结构中的界面偶极调制

2018 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2018-12-01 DOI:10.1109/IEDM.2018.8614674

N. Miyata, J. Nara, T. Yamasaki, K. Sumita, R. Sano, H. Nohira

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引用次数: 1

摘要

我们报道了HfO2/1-ML TiO2/SiO2 MOS堆叠结构中的电场诱导界面偶极子调制(IDM)。给出了IDM的实验证据，并从理论上证明了电场对界面Ti-O结构的重排是引起电位调制的原因。具有多个偶极调制层的多堆叠HfO2/SiO2 mosfet在低温工艺，实用的记忆窗口和稳定的电位开关方面具有前景。

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Interface Dipole Modulation in HfO2/SiO2 MOS Stack Structures

We report an electric-field-induced interface dipole modulation (IDM) in HfO2/1-ML TiO2/SiO2 MOS stack structures. Experimental evidence for IDM was exhibited, and rearrangement of interfacial Ti-O configuration by an electric field was theoretically demonstrated to cause the potential modulation. Multi-stack HfO2/SiO2 MOSFETs with multiple dipole modulation layers are promising in terms of a low temperature process, practical memory window, and stable potential switching.

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2018 IEEE International Electron Devices Meeting (IEDM)

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