部分窄面结构低损耗IGBT (PNM-IGBT)

2012 24th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2012-06-03 DOI:10.1109/ISPSD.2012.6229012

M. Sumitomo, J. Asai, H. Sakane, K. Arakawa, Y. Higuchi, M. Matsui

{"title":"部分窄面结构低损耗IGBT (PNM-IGBT)","authors":"M. Sumitomo, J. Asai, H. Sakane, K. Arakawa, Y. Higuchi, M. Matsui","doi":"10.1109/ISPSD.2012.6229012","DOIUrl":null,"url":null,"abstract":"A PNM (Partially Narrow Mesa) -IGBT with a fundamentally new surface is proposed for the first time. The unique gate shape looks like a “vase” and generates an extreme injection enhancement. Its performance approaches the limits of Si-IGBT. Therefore, PNM-IGBT is able to contribute to the saturation voltage reduction and the improvement of Vce(sat)-Eoff trade off. Furthermore, it can be adapted to actual conditions because of its sufficiently rugged structure.","PeriodicalId":371298,"journal":{"name":"2012 24th International Symposium on Power Semiconductor Devices and ICs","volume":"270 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"90","resultStr":"{\"title\":\"Low loss IGBT with Partially Narrow Mesa Structure (PNM-IGBT)\",\"authors\":\"M. Sumitomo, J. Asai, H. Sakane, K. Arakawa, Y. Higuchi, M. Matsui\",\"doi\":\"10.1109/ISPSD.2012.6229012\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A PNM (Partially Narrow Mesa) -IGBT with a fundamentally new surface is proposed for the first time. The unique gate shape looks like a “vase” and generates an extreme injection enhancement. Its performance approaches the limits of Si-IGBT. Therefore, PNM-IGBT is able to contribute to the saturation voltage reduction and the improvement of Vce(sat)-Eoff trade off. Furthermore, it can be adapted to actual conditions because of its sufficiently rugged structure.\",\"PeriodicalId\":371298,\"journal\":{\"name\":\"2012 24th International Symposium on Power Semiconductor Devices and ICs\",\"volume\":\"270 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"90\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 24th International Symposium on Power Semiconductor Devices and ICs\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2012.6229012\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 24th International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2012.6229012","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 90

摘要

首次提出了一种具有全新表面的PNM (partial Narrow Mesa) -IGBT。独特的闸门形状看起来像一个“花瓶”，并产生一个极端的注射增强。其性能接近Si-IGBT的极限。因此，PNM-IGBT能够有助于降低饱和电压和改善Vce(sat)-Eoff权衡。此外，由于其结构足够坚固，可以适应实际情况。

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Low loss IGBT with Partially Narrow Mesa Structure (PNM-IGBT)

A PNM (Partially Narrow Mesa) -IGBT with a fundamentally new surface is proposed for the first time. The unique gate shape looks like a “vase” and generates an extreme injection enhancement. Its performance approaches the limits of Si-IGBT. Therefore, PNM-IGBT is able to contribute to the saturation voltage reduction and the improvement of Vce(sat)-Eoff trade off. Furthermore, it can be adapted to actual conditions because of its sufficiently rugged structure.

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2012 24th International Symposium on Power Semiconductor Devices and ICs

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