{"title":"具有高增益和高击穿电压的GaInP/GaAs异质结构双极晶体管","authors":"Z. Abid, S. Mcalister, W. Mckinnon","doi":"10.1109/CORNEL.1993.303070","DOIUrl":null,"url":null,"abstract":"GaInP/GaAs/GaInP double heterostructure bipolar transistors, emitter area of 50/spl times/50 (/spl mu/m)/sup 2/, with a DC gain of 445 and breakdown voltage (V/sub CBO/) of more than 17 V have been fabricated. The Gummel plots give an ideality factor of 1.01 for the collector current and 1.1 for the base current, and the devices show gain down to collector currents of 10/sup -9/A. A higher gain, more than 800, was recorded for a smaller device, 20/spl times/50 (/spl mu/m)/sup 2/ emitter, but the breakdown voltages were lower.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"GaInP/GaAs heterostructure bipolar transistors with high gain and high breakdown voltages\",\"authors\":\"Z. Abid, S. Mcalister, W. Mckinnon\",\"doi\":\"10.1109/CORNEL.1993.303070\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GaInP/GaAs/GaInP double heterostructure bipolar transistors, emitter area of 50/spl times/50 (/spl mu/m)/sup 2/, with a DC gain of 445 and breakdown voltage (V/sub CBO/) of more than 17 V have been fabricated. The Gummel plots give an ideality factor of 1.01 for the collector current and 1.1 for the base current, and the devices show gain down to collector currents of 10/sup -9/A. A higher gain, more than 800, was recorded for a smaller device, 20/spl times/50 (/spl mu/m)/sup 2/ emitter, but the breakdown voltages were lower.<<ETX>>\",\"PeriodicalId\":129440,\"journal\":{\"name\":\"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-08-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CORNEL.1993.303070\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1993.303070","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaInP/GaAs heterostructure bipolar transistors with high gain and high breakdown voltages
GaInP/GaAs/GaInP double heterostructure bipolar transistors, emitter area of 50/spl times/50 (/spl mu/m)/sup 2/, with a DC gain of 445 and breakdown voltage (V/sub CBO/) of more than 17 V have been fabricated. The Gummel plots give an ideality factor of 1.01 for the collector current and 1.1 for the base current, and the devices show gain down to collector currents of 10/sup -9/A. A higher gain, more than 800, was recorded for a smaller device, 20/spl times/50 (/spl mu/m)/sup 2/ emitter, but the breakdown voltages were lower.<>
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