基于开关特性近似的RCD缓冲器设计。一、理论发展

Z. Hossain, K. Olejniczak, K. Burgers, J. Balda
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引用次数: 5

摘要

针对基于BJT-、GTO-、IGBT-和mct的开关型功率变换器,提出了新的优化RCD缓冲器设计方程,其中特别考虑了电路杂散电感引起的瞬态应力效应。基于这些优化设计方程,得到了关断能量损失的解析表达式。本文的分析适用于任何功率器件;这里选择MCT进行演示。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design of RCD snubbers based upon approximations to the switching characteristics. I. Theoretical development
New optimal RCD snubber design equations for use with BJT-, GTO-, IGBT- and MCT-based switch-mode power converters are presented which specifically incorporate the transient stress effects due to circuit stray inductance. Based on these optimal design equations, analytical expressions for turn-off energy losses are obtained. The analysis presented in this paper is applicable for any power device; the MCT has been chosen here for demonstration.
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