D. Fisch, N. Abt, F. Bens, W. Miller, T. Pramanik, W. Saiki, W. Shepherd
{"title":"薄膜铁电时效分析","authors":"D. Fisch, N. Abt, F. Bens, W. Miller, T. Pramanik, W. Saiki, W. Shepherd","doi":"10.1109/RELPHY.1990.66093","DOIUrl":null,"url":null,"abstract":"The effects of temperature, electric field, and the number of polarization reversals on ferroelectric memory aging are analyzed on ferroelectric capacitors and memory products. The signal loss proceeds linearly with the log of time. A relationship between read/write cycles and retention lifetime is established. Acceleration models and methods for testing ferroelectric memory reliability are proposed. Based on these models, retention and write endurance predictions are made.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"70 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Analysis of thin film ferroelectric aging\",\"authors\":\"D. Fisch, N. Abt, F. Bens, W. Miller, T. Pramanik, W. Saiki, W. Shepherd\",\"doi\":\"10.1109/RELPHY.1990.66093\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effects of temperature, electric field, and the number of polarization reversals on ferroelectric memory aging are analyzed on ferroelectric capacitors and memory products. The signal loss proceeds linearly with the log of time. A relationship between read/write cycles and retention lifetime is established. Acceleration models and methods for testing ferroelectric memory reliability are proposed. Based on these models, retention and write endurance predictions are made.<<ETX>>\",\"PeriodicalId\":409540,\"journal\":{\"name\":\"28th Annual Proceedings on Reliability Physics Symposium\",\"volume\":\"70 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"28th Annual Proceedings on Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.1990.66093\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"28th Annual Proceedings on Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.1990.66093","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The effects of temperature, electric field, and the number of polarization reversals on ferroelectric memory aging are analyzed on ferroelectric capacitors and memory products. The signal loss proceeds linearly with the log of time. A relationship between read/write cycles and retention lifetime is established. Acceleration models and methods for testing ferroelectric memory reliability are proposed. Based on these models, retention and write endurance predictions are made.<>
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