实现高q硅槽波导环形谐振器的优化方法

2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-26 DOI:10.1109/GROUP4.2015.7305953

Weiwei Zhang, S. Serna, X. Le roux, L. Vivien, E. Cassan

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引用次数: 1

摘要

我们提出了实现高q因子开槽SOI微环谐振器的两种方法:热干氧化法和耦合器改进法。对于弯曲半径为50μm的槽波导环形谐振器，qload为122,000，本征损耗低于2.2 dB/cm。

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Optimization approaches to achieve high-Q silicon slot waveguide ring resonators

We present two approaches to achieve high Q-factors slotted SOI micro-ring resonators: thermal dry oxidation process and coupler refinement methods. Qloaded of 122,000 and intrinsic losses below 2.2 dB/cm have been obtained for slot waveguide ring resonators with a 50μm bending radius.

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2015 IEEE 12th International Conference on Group IV Photonics (GFP)

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