基于参数化建模方法的GaAs mesfet噪声失效分析

Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 1997-07-21 DOI:10.1109/IPFA.1997.638342

J. Mun, Hae-cheon Kim, Chung-Hwan Kim, Min-Gun Kim, Jae Jin Lee, K. Pyun

{"title":"基于参数化建模方法的GaAs mesfet噪声失效分析","authors":"J. Mun, Hae-cheon Kim, Chung-Hwan Kim, Min-Gun Kim, Jae Jin Lee, K. Pyun","doi":"10.1109/IPFA.1997.638342","DOIUrl":null,"url":null,"abstract":"The noise degradation of GaAs MESFETs was investigated by thermal step stress tests with no bias in atmosphere. Minimum noise figure, associated gain, scattering parameters, and C-V profiles were measured during the tests. The noise degradation is mainly attributed to the decrease of AC transconductance, resulting from the carrier compensation by Ga vacancies in the channel. The decrease of effective carrier concentration resulting from the thermally activated interdiffusion between the gate metal and the GaAs channel layer is proposed to be the main failure mechanism for noise degradation of GaAs MESFETs.","PeriodicalId":159177,"journal":{"name":"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"4 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Failure analysis of noise characteristics in GaAs MESFETs with parametric modeling approach\",\"authors\":\"J. Mun, Hae-cheon Kim, Chung-Hwan Kim, Min-Gun Kim, Jae Jin Lee, K. Pyun\",\"doi\":\"10.1109/IPFA.1997.638342\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The noise degradation of GaAs MESFETs was investigated by thermal step stress tests with no bias in atmosphere. Minimum noise figure, associated gain, scattering parameters, and C-V profiles were measured during the tests. The noise degradation is mainly attributed to the decrease of AC transconductance, resulting from the carrier compensation by Ga vacancies in the channel. The decrease of effective carrier concentration resulting from the thermally activated interdiffusion between the gate metal and the GaAs channel layer is proposed to be the main failure mechanism for noise degradation of GaAs MESFETs.\",\"PeriodicalId\":159177,\"journal\":{\"name\":\"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"volume\":\"4 1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-07-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.1997.638342\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.1997.638342","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用无偏置气氛下的热阶应力测试方法，研究了GaAs mesfet的噪声退化问题。测试期间测量了最小噪声系数、相关增益、散射参数和C-V曲线。噪声的降低主要是由于通道中Ga空位的载波补偿导致交流跨导的降低。栅极金属与GaAs沟道层之间的热激活相互扩散导致有效载流子浓度的降低是GaAs mesfet噪声退化的主要失效机制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Failure analysis of noise characteristics in GaAs MESFETs with parametric modeling approach

The noise degradation of GaAs MESFETs was investigated by thermal step stress tests with no bias in atmosphere. Minimum noise figure, associated gain, scattering parameters, and C-V profiles were measured during the tests. The noise degradation is mainly attributed to the decrease of AC transconductance, resulting from the carrier compensation by Ga vacancies in the channel. The decrease of effective carrier concentration resulting from the thermally activated interdiffusion between the gate metal and the GaAs channel layer is proposed to be the main failure mechanism for noise degradation of GaAs MESFETs.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits

自引率

0.00%

发文量