C. Claeys, Eddy Simoen, P. Agopian, J. Martino, M. Aoulaiche, B. Crețu, W. Fang, R. Rooyackers, A. Vandooren, Anabela Veloso, Malgorzata Jurczak, N. Collaert, Aaron Thean
{"title":"越小越吵?先进半导体器件的低频噪声诊断","authors":"C. Claeys, Eddy Simoen, P. Agopian, J. Martino, M. Aoulaiche, B. Crețu, W. Fang, R. Rooyackers, A. Vandooren, Anabela Veloso, Malgorzata Jurczak, N. Collaert, Aaron Thean","doi":"10.1109/SBMICRO.2015.7298104","DOIUrl":null,"url":null,"abstract":"Low frequency noise diagnostics is a powerful tool to study the quality of gate stacks and the different interfaces and also gives detailed information on the device performance and reliability. The influence of new materials, different processing treatments and alternative device concepts on the low frequency noise performance will be reviewed for a variety of advanced device technologies including aspects such as strain engineering, heteroexpitaxial growth, gate-first and gate-last or replacement metal gate integration schemes etc. Results for both planar and 3D structures (FinFETs, TFETs) will be reported and benchmarked with the LF noise specifications of the International Technology Roadmap for Semiconductors (ITRS).","PeriodicalId":342493,"journal":{"name":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The smaller the noisier? Low frequency noise diagnostics of advanced semiconductor devices\",\"authors\":\"C. Claeys, Eddy Simoen, P. Agopian, J. Martino, M. Aoulaiche, B. Crețu, W. Fang, R. Rooyackers, A. Vandooren, Anabela Veloso, Malgorzata Jurczak, N. Collaert, Aaron Thean\",\"doi\":\"10.1109/SBMICRO.2015.7298104\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Low frequency noise diagnostics is a powerful tool to study the quality of gate stacks and the different interfaces and also gives detailed information on the device performance and reliability. The influence of new materials, different processing treatments and alternative device concepts on the low frequency noise performance will be reviewed for a variety of advanced device technologies including aspects such as strain engineering, heteroexpitaxial growth, gate-first and gate-last or replacement metal gate integration schemes etc. Results for both planar and 3D structures (FinFETs, TFETs) will be reported and benchmarked with the LF noise specifications of the International Technology Roadmap for Semiconductors (ITRS).\",\"PeriodicalId\":342493,\"journal\":{\"name\":\"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SBMICRO.2015.7298104\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBMICRO.2015.7298104","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The smaller the noisier? Low frequency noise diagnostics of advanced semiconductor devices
Low frequency noise diagnostics is a powerful tool to study the quality of gate stacks and the different interfaces and also gives detailed information on the device performance and reliability. The influence of new materials, different processing treatments and alternative device concepts on the low frequency noise performance will be reviewed for a variety of advanced device technologies including aspects such as strain engineering, heteroexpitaxial growth, gate-first and gate-last or replacement metal gate integration schemes etc. Results for both planar and 3D structures (FinFETs, TFETs) will be reported and benchmarked with the LF noise specifications of the International Technology Roadmap for Semiconductors (ITRS).
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
