3.5瓦AlGaN/GaN hemt和35 GHz放大器

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI:10.1109/IEDM.2003.1269349

Y. Wu, M. Moore, A. Saxler, P. Smith, P. Chavarkar, P. Parikh

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引用次数: 31

摘要

Sub-0.2-/spl mu/m的AlGaN/GaN hemt成功缩放到1.05 mm栅极宽度，增益略有降低。片上单级放大器在30 GHz和35 GHz频段的增益分别为8 dB和7.5 dB，输出功率分别为3.6 W和3.5 W。这种毫米波频率下的多瓦输出功率远远超过了以前最先进的GaN HEMT，可与6-7倍大的gaas器件相媲美。

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3.5-watt AlGaN/GaN HEMTs and amplifiers at 35 GHz

Sub-0.2-/spl mu/m AlGaN/GaN HEMTs were successfully scaled to 1.05 mm gate-width with minor gain reduction. On-chip single-stage amplifiers exhibited gains of 8 dB and 7.5 dB, as well as output powers of 3.6 W and 3.5 W, at 30 GHz and 35 GHz, respectively. This multi-watt output power at millimeter-wave frequencies well exceeded previous state-of-the-art for a GaN HEMT and is comparable to that from 6-7 times larger GaAs-based devices.

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IEEE International Electron Devices Meeting 2003

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