两步Ar/N2等离子体活化铝表面的Al-Al直接键合

Liangxing Hu, Y. Lim, P. Zhao, Michael Joo Zhong Lim, Chuan Seng Tan
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引用次数: 4

摘要

本研究报道了两步氩/氮等离子体活化铝表面用于铝-铝直接粘合。对沉积态和氩/氮等离子体活化铝的表面亲水性和表面化学状态进行了表征。结果表明,等离子体活化铝表面在8°处具有较小的水接触角(即更亲水)和较薄的氮化铝层。此外,在300°C和2000 mBar下退火的等离子体活化模具具有令人印象印象的~32 MPa的机械结合强度和优异的结合质量。这种等离子体激活的粘合过程速度快(10秒),结合力低(50 N),可以在洁净室环境中进行,表明其在高通量异构集成和先进封装方面的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Two-Step Ar/N2 Plasma-Activated Al Surface for Al-Al Direct Bonding
In this study, two-step argon/nitrogen plasma-activated aluminum surface for aluminum-aluminum direct bonding is reported. Surfaces from the as-deposited and the argon/nitrogen plasma-activated aluminum are characterized for hydrophilicity and surface chemical states. The results demonstrate that the plasma-activated aluminum surface has smaller water contact angle at 8° (i.e. more hydrophilic) and a thin layer of aluminum nitride. Moreover, the bonded plasma-activated dies, annealed at 300°C under 2000 mBar, have an impressive mechanical bonding strength of ~32 MPa with superior bonding quality. This plasma-activated bonding process is fast (10 s), requires low bonding force (50 N) and can be carried out in cleanroom environment, indicating its full promise for high-throughput heterogeneous integration and advanced packaging.
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