采用40nm CMOS技术的300ghz波段基频上转换混频器

Koki Sekine, Toyoyuki Hagiwara, K. Takano, S. Hara, A. Kasamatsu, Y. Umeda
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引用次数: 0

摘要

近年来,随着通信速度的提高,300 ghz频段因其宽频带而备受关注。为了实现该区域的发射机,研究了工作在300ghz频段的上变频混频器。传统混频器的问题是它们不能分离LO和IF信号端口,即使可以,谐波也会在RF频段附近产生。在这项工作中,我们提出了一个上转换混频器,具有独立的LO和IF端口和谐波抑制。采用40纳米CMOS工艺,实现了带宽为19 GHz、最大输出功率为-42.69 dBm的上转换混频器。如果输入5dbm的LO信号,可以得到大约- 20dbm的输出功率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 300 GHz Band Fundamental Up-Conversion Mixer Using 40 nm CMOS Technology
In recent years, as communication speeds increase, the 300-GHz band has been attracting attention for its wide bandwidth. To realize transmitter in such a region, research has been conducted on up-conversion mixers operating at the 300-GHz band. The problem with conventional mixers is that they can’t separate the LO and IF signal ports, and even if they could, harmonics would be generated near the RF band. In this work, we propose an up-conversion mixer with separate LO and IF ports and harmonic suppression. Using a 40-nm CMOS process, we realize the up-conversion mixer with a bandwidth of 19 GHz and a maximum output power of -42.69 dBm. If the LO signal of 5 dBm is input, the output power of approximately -20 dBm can be obtained.
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