{"title":"MOS-GTO的开启原理","authors":"M. Stoisiek, D. Theis","doi":"10.1109/PESC.1986.7415550","DOIUrl":null,"url":null,"abstract":"MOS-GTOs represent a new generation of turn-off thyristors offering considerable advantages in the turn-off behaviour as compared to conventional GTOs. However, MOS-GTOs generally require two control electrodes for turn-on, which might be regarded as a disadvantage. This paper shows that in MOS-GTOs with a p-channel cathode structure it is possible to turn the thyristor on and off by controlling only just one MOS gate electrode. As a triggering current for turn-on the MOS capacitance displacement current is used. MOS-GTOs with current gain βnpn = 30 and gate delay times of tgd = 8 µs were realized. Turn-on occurs homogeneously over the entire device. One-dimensional simulations indicate that thyristors with tgd = 1 µs can be realized, provided that βnpn 100.","PeriodicalId":164857,"journal":{"name":"1986 17th Annual IEEE Power Electronics Specialists Conference","volume":"26 9","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Turn-on principles of MOS-GTO\",\"authors\":\"M. Stoisiek, D. Theis\",\"doi\":\"10.1109/PESC.1986.7415550\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"MOS-GTOs represent a new generation of turn-off thyristors offering considerable advantages in the turn-off behaviour as compared to conventional GTOs. However, MOS-GTOs generally require two control electrodes for turn-on, which might be regarded as a disadvantage. This paper shows that in MOS-GTOs with a p-channel cathode structure it is possible to turn the thyristor on and off by controlling only just one MOS gate electrode. As a triggering current for turn-on the MOS capacitance displacement current is used. MOS-GTOs with current gain βnpn = 30 and gate delay times of tgd = 8 µs were realized. Turn-on occurs homogeneously over the entire device. One-dimensional simulations indicate that thyristors with tgd = 1 µs can be realized, provided that βnpn 100.\",\"PeriodicalId\":164857,\"journal\":{\"name\":\"1986 17th Annual IEEE Power Electronics Specialists Conference\",\"volume\":\"26 9\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-06-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1986 17th Annual IEEE Power Electronics Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PESC.1986.7415550\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1986 17th Annual IEEE Power Electronics Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1986.7415550","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
MOS-GTOs represent a new generation of turn-off thyristors offering considerable advantages in the turn-off behaviour as compared to conventional GTOs. However, MOS-GTOs generally require two control electrodes for turn-on, which might be regarded as a disadvantage. This paper shows that in MOS-GTOs with a p-channel cathode structure it is possible to turn the thyristor on and off by controlling only just one MOS gate electrode. As a triggering current for turn-on the MOS capacitance displacement current is used. MOS-GTOs with current gain βnpn = 30 and gate delay times of tgd = 8 µs were realized. Turn-on occurs homogeneously over the entire device. One-dimensional simulations indicate that thyristors with tgd = 1 µs can be realized, provided that βnpn 100.
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