一种高压高频变压器的新拓扑结构

M. Pérez, C. Blanco, M. Rico, F. Linera
{"title":"一种高压高频变压器的新拓扑结构","authors":"M. Pérez, C. Blanco, M. Rico, F. Linera","doi":"10.1109/APEC.1995.469076","DOIUrl":null,"url":null,"abstract":"When a DC high voltage needs to be obtained from low voltage inputs (mains voltage), the necessary power converter needs a high value for its transformation ratio; consequently, a large number of turns is often necessary for secondary windings and some parasitics appear (large leakage inductance and large capacitance). Thus, it is usual to design a resonant converter to include both inductance and capacitance in the power topology. However, as the parasitics are used to obtain the resonance, their value (and their spreads) are critical. The paper proposes several criteria in order to establish an adequate method for constructing the transformer, and a new topology for transformers and a model for parasitic capacitances are also presented taking into account high voltage and high frequency problems and limitations of materials.<<ETX>>","PeriodicalId":335367,"journal":{"name":"Proceedings of 1995 IEEE Applied Power Electronics Conference and Exposition - APEC'95","volume":"143 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"33","resultStr":"{\"title\":\"A new topology for high voltage, high frequency transformers\",\"authors\":\"M. Pérez, C. Blanco, M. Rico, F. Linera\",\"doi\":\"10.1109/APEC.1995.469076\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"When a DC high voltage needs to be obtained from low voltage inputs (mains voltage), the necessary power converter needs a high value for its transformation ratio; consequently, a large number of turns is often necessary for secondary windings and some parasitics appear (large leakage inductance and large capacitance). Thus, it is usual to design a resonant converter to include both inductance and capacitance in the power topology. However, as the parasitics are used to obtain the resonance, their value (and their spreads) are critical. The paper proposes several criteria in order to establish an adequate method for constructing the transformer, and a new topology for transformers and a model for parasitic capacitances are also presented taking into account high voltage and high frequency problems and limitations of materials.<<ETX>>\",\"PeriodicalId\":335367,\"journal\":{\"name\":\"Proceedings of 1995 IEEE Applied Power Electronics Conference and Exposition - APEC'95\",\"volume\":\"143 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-03-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"33\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1995 IEEE Applied Power Electronics Conference and Exposition - APEC'95\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APEC.1995.469076\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1995 IEEE Applied Power Electronics Conference and Exposition - APEC'95","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEC.1995.469076","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 33

摘要

当需要从低压输入(市电电压)获得直流高电压时,所需的功率变换器需要一个高的变比值;因此,二次绕组往往需要大量匝数,并出现一些寄生现象(大漏电感和大电容)。因此,通常设计一个谐振变换器,在功率拓扑中同时包含电感和电容。然而,由于寄生体是用来获得共振的,它们的值(和它们的传播)是至关重要的。本文提出了几个标准,以建立一个适当的方法来构建变压器,并提出了一种新的变压器拓扑结构和寄生电容模型,考虑到高压和高频的问题和材料的限制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A new topology for high voltage, high frequency transformers
When a DC high voltage needs to be obtained from low voltage inputs (mains voltage), the necessary power converter needs a high value for its transformation ratio; consequently, a large number of turns is often necessary for secondary windings and some parasitics appear (large leakage inductance and large capacitance). Thus, it is usual to design a resonant converter to include both inductance and capacitance in the power topology. However, as the parasitics are used to obtain the resonance, their value (and their spreads) are critical. The paper proposes several criteria in order to establish an adequate method for constructing the transformer, and a new topology for transformers and a model for parasitic capacitances are also presented taking into account high voltage and high frequency problems and limitations of materials.<>
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
CiteScore
3.20
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信