三维设备中的带对带隧道

2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI:10.1109/IWCE.2014.6865810

Lidija Filipović, O. Baumgartner, Z. Stanojević, H. Kosina

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引用次数: 0

摘要

这项工作的重点是研究3D器件中的带对带隧道，同时考虑材料性质(质量，掺杂)，应用偏压或几何形状的变化。通过对圆柱形纳米线、锥形结构和掺杂浓度变化的模拟研究，证明了三维效应在带间隧道电流计算中的重要性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Band-to-band tunneling in 3D devices

This work focuses on studying band-to-band tunneling in 3D devices, while considering variations in material properties (mass, doping), applied bias, or geometry. A simulation study of cylindrical nanowires, tapered structures and doping concentration variation demonstrates the importance of 3D effects in band-to-band tunneling current computation.

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来源期刊

2014 International Workshop on Computational Electronics (IWCE)

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