高良率放大器的匹配结构设计

1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI:10.1109/MWSYM.1988.22054

J. Purviance, W. Brakensiek, D. Monteith, T. Ferguson

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引用次数: 3

摘要

对常用的窄带集总参数和分布参数匹配结构的电路良率进行了评估。结果表明，在史密斯图的给定区域内，每种结构对负载阻抗的屈服都是最高的。开发了一个简单的设计图，为设计人员提供了一个适用于任何给定负载阻抗的高良率匹配结构。两个例子说明了它的用法。

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Matching structures for high yield amplifier design

Circuit yield is evaluated for the commonly used narrowband lumped- and distributed-parameter matching structures. It is shown that each structure has highest yield for load impedances in a given region on the Smith chart. A simple design chart is developed which gives the designer a high-yield matching structure for any given load impedance. Two examples illustrate its use.<>

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1988., IEEE MTT-S International Microwave Symposium Digest

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