Yukio Watanabe, D. Matsumoto, Y. Urakami, M. Okano, A. Masuda
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引用次数: 0
摘要
Ohtomo和Hwang发现的由铁电极化和LaAlO3/ srtio3引起的畴边界电导非常有趣[Nature 427, 423(2004)]。如果这些电导由于缺陷而与畴边界和氧化物界面的常规电导不同,它们就证明了早期的预测[物理学家]。Rev. Lett. 86, 332(2001);理论物理。Rev. B57, 789(1998)]。也就是说,当这些导电主要是由铁电极化引起时,中尺度和纳米尺度铁电体的基础应该改变。考虑到传统的机制,包括电阻开关(RRAM)中的高场效应,我们研究了它们的起源并讨论了这些影响。
Origins of Conduction at Domain Boundaries, LaAlO3/SrTiO3 and Surface for Depolarization & Size Effect
The conductions at domain boundaries due to ferroelectric polarization and LaAlO3/SrTiO3found by Ohtomo and Hwang [Nature 427, 423 (2004)] are intriguing. If these conductions are different from the conventional conductions at domain boundaries and oxide interfaces due to defects, they prove the earlier predictions [Phys. Rev. Lett. 86, 332(2001); Phys. Rev. B57, 789(1998)]. That is, when these conductions are primarily due to ferroelectric polarization as predicted, the foundations of mesoscale and nanoscale ferroelectrics should change. Considering conventional mechanisms including the high field effect as in the resistance switching (RRAM), we examine their origin and discuss these implications.