一个完全充电，bicmos兼容，高压MOS晶体管

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings Pub Date : 1996-05-20 DOI:10.1109/ISPSD.1996.509467

Min Liu, C. Salama, P. Schvan, M. King

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引用次数: 6

摘要

本文提出并实现了一种与亚微米BiCMOS技术兼容的全换料高压MOS结构。该器件是连接隔离的，因此适用于高侧驱动应用。使用这种结构，可以在不改变井区的情况下优化设备内的回流条件。器件击穿电压超过200 V，比导通电阻约为20 m/spl ω //spl middot/cm/sup 2/。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A fully resurfed, BiCMOS-compatible, high voltage MOS transistor

In this paper a fully resurfed, high voltage MOS structure compatible with submicron BiCMOS technology is proposed and implemented. The device is junction-isolated and is therefore suitable for high-side drive applications. Using this structure, the resurf condition in the device can be optimized without altering the well regions. Devices with breakdown voltages over 200 V and specific on-resistances on the order of 20 m/spl Omega//spl middot/cm/sup 2/ were obtained.

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来源期刊

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings

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