{"title":"GaAs p-i-n二极管的阻抗","authors":"A. Gopinath","doi":"10.1109/MWSYM.1988.22153","DOIUrl":null,"url":null,"abstract":"A computer model of GaAs p-i-n diodes shows that when the intrinsic-layer (i-layer) thickness is greater than about four times the diffusion length, diode forward resistance can be high. Comparison with measured I-V characteristics suggests that diodes now have i-layers with lifetimes of about 10/sup -7/ s.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impedance of GaAs p-i-n diodes\",\"authors\":\"A. Gopinath\",\"doi\":\"10.1109/MWSYM.1988.22153\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A computer model of GaAs p-i-n diodes shows that when the intrinsic-layer (i-layer) thickness is greater than about four times the diffusion length, diode forward resistance can be high. Comparison with measured I-V characteristics suggests that diodes now have i-layers with lifetimes of about 10/sup -7/ s.<<ETX>>\",\"PeriodicalId\":339513,\"journal\":{\"name\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-05-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1988.22153\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1988., IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1988.22153","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A computer model of GaAs p-i-n diodes shows that when the intrinsic-layer (i-layer) thickness is greater than about four times the diffusion length, diode forward resistance can be high. Comparison with measured I-V characteristics suggests that diodes now have i-layers with lifetimes of about 10/sup -7/ s.<>
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
