离子束后处理基底冷却对ZAO薄膜性能的影响

Wenna Wang, Dawei Zhang, Qi Wang, Chuanxian Tao, Zheng-ji Ni, S. Zhuang, T. Mei, Daohua Zhang
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引用次数: 0

摘要

在触摸屏和显示面板中需要具有低表面粗糙度和低片电阻的ZAO薄膜。本文研究了离子束后处理对ZAO薄膜性能的影响,提出了一种同时获得低表面粗糙度和低片阻的新方法。更令人兴奋的是,在离子束后处理过程中,与未经冷却的样品相比,适当冷却电压的样品的片电阻降低了26%(从11.9 Ω/□降低到8.8 Ω/□),粗糙度降低了35.5%(从13.389 nm降低到8.637 nm),且透明度没有损失。并推导出基体冷却有削弱结晶的作用,特别是对试样的下部和内部有削弱结晶的作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The substrate cooling effect of ion beam post treatment on ZAO films properties
ZAO thin films with low surface roughness and low sheet resistance are required in the touch panels and display panels. In this work, we investigated the substrate cooling effect of ion beam post treatment on ZAO films properties, and one new way of obtain low surface roughness and low sheet resistance same time was proposed. The more exciting find of this paper is that, comparing to the samples without cooling during the process of ion beam post treatment, samples with proper cooling voltage show a sheet resistance decrease of 26% (from 11.9 Ω/□ to 8.8 Ω/□) and a roughness decrease of 35.5% (from 13.389 nm to 8.637 nm) without transparency losing. And the viewpoint that substrate cooling has the effect of weakening the crystallization, especially for the sub-face and internal parts of samples is deduced.
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