LSAT(001)上生长外延Ba(Zr0.35Ti0.65)O3薄膜的面内介电特性

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI:10.1109/ISAF.2007.4393221

P. Yun, D.Y. Wang, Y. Wang, H. Chan

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引用次数: 0

摘要

采用脉冲激光沉积技术在(LaAlO3)O3(Sr2AlTaO6)0.35 [LSAT](001)单晶衬底上沉积Ba(Zr0.35Ti0.65)O3 (BZT)薄膜。x射线衍射图显示薄膜呈纯钙钛矿相外延生长。采用金数字间电极对Ba(Zr0.35Ti0.65)O3薄膜的面内介电性能进行了表征，表征为频率(1 kHz -1 GHz)、温度(-130℃-100℃)和直流电场(0-13.3 V/mum)的函数。在整个频率范围内，薄膜的相对介电常数与直流偏置场有很强的相关性。在1 kHz至1 GHz的频率范围内，相对介电常数在室温下具有60% -31.2%的高可调性，显示了Ba(Zr0.35Ti0.65)O3薄膜在微波器件中的应用潜力。

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In-plane Dielectric Characterization of Epitaxial Ba(Zr0.35Ti0.65)O3 Thin Films Grown on LSAT (001)

Ba(Zr_0.35Ti_0.65)O₃ (BZT) thin film was deposited on (LaAlO₃)O₃(Sr₂AlTaO₆)_0.35 [LSAT] (001) single crystal substrate using pulsed laser deposition. The X-ray diffraction pattern reveals an epitaxial growth of the film with a pure perovskite phase. The in-plane dielectric properties of the Ba(Zr_0.35Ti_0.65)O₃ thin film was characterized as a function of frequency (1 kHz -1 GHz), temperature (-130degC-100degC) and dc electric field (0-13.3 V/mum) using gold interdigital electrodes. The relative permittivity of the film exhibits strong dependence of the dc bias field over the whole frequency range. The relative permittivity has a high tunability of 60% -31.2% at room temperature in the frequency range of 1 kHz to 1 GHz, showing the potential of our Ba(Zr_0.35Ti_0.65)O₃ thin film to be used in microwave devices.

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2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics

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