基于1位pin二极管的发射阵列单元的广义非线性模型

V. Kirillov, P. Turalchuk
{"title":"基于1位pin二极管的发射阵列单元的广义非线性模型","authors":"V. Kirillov, P. Turalchuk","doi":"10.1109/iWAT54881.2022.9811015","DOIUrl":null,"url":null,"abstract":"This paper presents the results of an analysis of the nonlinear distortions in the transmitarray unit cell caused by the control element. The model of a unit cell with a one-bit PIN diode phase shifter was developed, to evaluate the loss and third-order intermodulation products dependencies on an applied voltage. The unit cell was manufactured and measured to prove the model simulation results. Measurements results of the transmission coefficient modules and third-order intermodulation products level as function of input power for different bias voltages are in a good agreement with the simulated results. It allows using this model for the estimation of the linear and nonlinear performance of the transmitarray.","PeriodicalId":106416,"journal":{"name":"2022 International Workshop on Antenna Technology (iWAT)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Generalized Nonlinear Model of 1-bit PIN-diode Based Transmitarray Unit Cell\",\"authors\":\"V. Kirillov, P. Turalchuk\",\"doi\":\"10.1109/iWAT54881.2022.9811015\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the results of an analysis of the nonlinear distortions in the transmitarray unit cell caused by the control element. The model of a unit cell with a one-bit PIN diode phase shifter was developed, to evaluate the loss and third-order intermodulation products dependencies on an applied voltage. The unit cell was manufactured and measured to prove the model simulation results. Measurements results of the transmission coefficient modules and third-order intermodulation products level as function of input power for different bias voltages are in a good agreement with the simulated results. It allows using this model for the estimation of the linear and nonlinear performance of the transmitarray.\",\"PeriodicalId\":106416,\"journal\":{\"name\":\"2022 International Workshop on Antenna Technology (iWAT)\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-05-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 International Workshop on Antenna Technology (iWAT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/iWAT54881.2022.9811015\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Workshop on Antenna Technology (iWAT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/iWAT54881.2022.9811015","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文介绍了由控制元件引起的发射阵列单元的非线性畸变的分析结果。建立了具有1位PIN二极管移相器的单元电池模型,以评估损耗和三阶互调产物对外加电压的依赖关系。制作并测量了单元胞,验证了模型的仿真结果。不同偏置电压下传输系数模块和三阶互调积电平随输入功率的变化的测量结果与仿真结果吻合较好。它允许使用该模型来估计发射阵列的线性和非线性性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Generalized Nonlinear Model of 1-bit PIN-diode Based Transmitarray Unit Cell
This paper presents the results of an analysis of the nonlinear distortions in the transmitarray unit cell caused by the control element. The model of a unit cell with a one-bit PIN diode phase shifter was developed, to evaluate the loss and third-order intermodulation products dependencies on an applied voltage. The unit cell was manufactured and measured to prove the model simulation results. Measurements results of the transmission coefficient modules and third-order intermodulation products level as function of input power for different bias voltages are in a good agreement with the simulated results. It allows using this model for the estimation of the linear and nonlinear performance of the transmitarray.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信