gasalyin1 - x - yas的电子和光学性质的赝势计算

A. Louhadj, H. Barhoumi, H. Abid
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引用次数: 0

摘要

提出了一种以闪锌矿结构计算四元合金GaAlInAs电子结构的方法。我们使用了经验伪势法与虚晶体近似(VCA)相结合。研究了GaAlInAs (x = 0.24, y = 0.24)的电子结构,以及与InP和GaAs匹配的GaAlInAs晶格。此外,本文还提出了一种利用Sellmeir模型计算折射率的方法。讨论了折射率的成分依赖关系,结果表明,与InP和GaAs相匹配的GaAlInAs晶格的合金成分使折射率降低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Pseudo-potential calculations of the electronic and optical properties of GaxAlyIn1–x–yAs
A method for calculating the electronic structure of the quaternary alloy GaAlInAs is presented with zinc blende structure. We have used the empirical pseudo-potential method coupled with the virtual crystal approximation (VCA). The electronic structures are studied for GaAlInAs (x = 0.24, y = 0.24) and GaAlInAs lattice matched to InP as well GaAs. In addition a method for calculating the refractive index is presented, which we used the Sellmeir model. The composition dependence of the refractive index is discussed, the results indicate that refractive index decrease with alloying composition of the quaternary alloy GaAlInAs lattice matched to InP and GaAs.
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