Characterization and Modeling of Trapping Effects in GaAs Enhanced HEMT under High Input Dynamic Range

Trapping effects (TE) have significant influence on device performances, including Pulse-IV, scattering parameters and linearity. Due to its slight influence on GaAs high electron mobility transistors (HEMTs), the TE are always neglected in compact models like EE-HEMT. In this paper, we present a physical-based quasi-physical zone division (QPZD) large-signal model and the TE is characterized by using simplified Shockley-Read-Hall (SRH) model, which can characterize the dynamic process of electron capture and emission. The results show that a more accurate model is obtained with TE taken into consideration, which can characterize the Pulse-IV and radio frequency (RF) performance with less errors, especially the linearity of GaAs HEMTs under two-tone excitation with high input dynamic range.