{"title":"集成硅红外微光谱仪的性能研究","authors":"S. Kong, G. de Graaf, L. Rocha, R. Wolffenbuttel","doi":"10.1109/IMTC.2003.1208248","DOIUrl":null,"url":null,"abstract":"The performance of a microspectrometer fabricated in silicon using micromachining techniques is presented. The optical system is composed of two bonded silicon wafers, which have been subjected to microelectronic process compatible micromachining to co-integrate the optical components (an aluminum based grating, an optical path in crystalline silicon and array of poly-silicon thermo-couples) with readout circuits in silicon. Design considerations, fabrication and performance are presented. Measurements confirm an IR operating range between 1 and 9 µm and a half-power spectral resolution of 0.5 µm.","PeriodicalId":135321,"journal":{"name":"Proceedings of the 20th IEEE Instrumentation Technology Conference (Cat. No.03CH37412)","volume":"304 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Performance of integrated silicon infrared microspectrometers\",\"authors\":\"S. Kong, G. de Graaf, L. Rocha, R. Wolffenbuttel\",\"doi\":\"10.1109/IMTC.2003.1208248\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The performance of a microspectrometer fabricated in silicon using micromachining techniques is presented. The optical system is composed of two bonded silicon wafers, which have been subjected to microelectronic process compatible micromachining to co-integrate the optical components (an aluminum based grating, an optical path in crystalline silicon and array of poly-silicon thermo-couples) with readout circuits in silicon. Design considerations, fabrication and performance are presented. Measurements confirm an IR operating range between 1 and 9 µm and a half-power spectral resolution of 0.5 µm.\",\"PeriodicalId\":135321,\"journal\":{\"name\":\"Proceedings of the 20th IEEE Instrumentation Technology Conference (Cat. No.03CH37412)\",\"volume\":\"304 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 20th IEEE Instrumentation Technology Conference (Cat. No.03CH37412)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMTC.2003.1208248\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 20th IEEE Instrumentation Technology Conference (Cat. No.03CH37412)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMTC.2003.1208248","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Performance of integrated silicon infrared microspectrometers
The performance of a microspectrometer fabricated in silicon using micromachining techniques is presented. The optical system is composed of two bonded silicon wafers, which have been subjected to microelectronic process compatible micromachining to co-integrate the optical components (an aluminum based grating, an optical path in crystalline silicon and array of poly-silicon thermo-couples) with readout circuits in silicon. Design considerations, fabrication and performance are presented. Measurements confirm an IR operating range between 1 and 9 µm and a half-power spectral resolution of 0.5 µm.