光激发GaAs-AlAs型超晶格的亚带共振振荡

International Topical Meeting on Microwave Photonics. MWP '96 Technical Digest. Satellite Workshop (Cat. No.96TH8153) Pub Date : 1996-12-03 DOI:10.1109/MWP.1996.662087

H. Mimura, M. Hosoda, N. Ohtani, H. Grahn, K. Yokoo

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摘要

在光激发、未掺杂的ii型砷化镓超晶格中观察到亚带共振振荡。频率可以通过施加电压或光激发载流子密度在很宽的范围内调谐。振荡是由两个电场域之间的振荡域边界引起的。

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Subband-resonance oscillations in photoexcited GaAs-AlAs type-II superlattices

Subband-resonance oscillations have been observed in photoexcited, undoped type-II GaAsAlAs superlattices. The frequency can be tuned over a wide range either by the applied voltage or the photoexcited carrier density. The oscillations are due to an oscillating domain boundary between two electric-field domains.

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International Topical Meeting on Microwave Photonics. MWP '96 Technical Digest. Satellite Workshop (Cat. No.96TH8153)

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