用于多值存储器的多峰谐振隧道二极管

Sen Jung Wei, H. Lin
{"title":"用于多值存储器的多峰谐振隧道二极管","authors":"Sen Jung Wei, H. Lin","doi":"10.1109/ISMVL.1991.130728","DOIUrl":null,"url":null,"abstract":"Several designs for a high-speed static random access multivalued memory using the folding characteristics of multiple peak resonant tunneling diodes (RTDs) are presented. The different designs are described and studied by comparing their power consumption under different conditions of device parameters and the switching speed. It is shown that the proposed memory cell using a pair of multiple-peak RTDs yields the best result from the standpoint of size, power dissipation, and speed.<<ETX>>","PeriodicalId":127974,"journal":{"name":"[1991] Proceedings of the Twenty-First International Symposium on Multiple-Valued Logic","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Multiple peak resonant tunneling diode for multi-valued memory\",\"authors\":\"Sen Jung Wei, H. Lin\",\"doi\":\"10.1109/ISMVL.1991.130728\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Several designs for a high-speed static random access multivalued memory using the folding characteristics of multiple peak resonant tunneling diodes (RTDs) are presented. The different designs are described and studied by comparing their power consumption under different conditions of device parameters and the switching speed. It is shown that the proposed memory cell using a pair of multiple-peak RTDs yields the best result from the standpoint of size, power dissipation, and speed.<<ETX>>\",\"PeriodicalId\":127974,\"journal\":{\"name\":\"[1991] Proceedings of the Twenty-First International Symposium on Multiple-Valued Logic\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[1991] Proceedings of the Twenty-First International Symposium on Multiple-Valued Logic\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISMVL.1991.130728\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1991] Proceedings of the Twenty-First International Symposium on Multiple-Valued Logic","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISMVL.1991.130728","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

介绍了几种利用多峰共振隧道二极管(rtd)折叠特性的高速静态随机存取多值存储器设计。通过比较不同器件参数和开关速度条件下的功耗,对不同的设计进行了描述和研究。结果表明,从尺寸、功耗和速度的角度来看,采用一对多峰rtd的存储单元效果最佳
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Multiple peak resonant tunneling diode for multi-valued memory
Several designs for a high-speed static random access multivalued memory using the folding characteristics of multiple peak resonant tunneling diodes (RTDs) are presented. The different designs are described and studied by comparing their power consumption under different conditions of device parameters and the switching speed. It is shown that the proposed memory cell using a pair of multiple-peak RTDs yields the best result from the standpoint of size, power dissipation, and speed.<>
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信