III-V纳米线mosfet和异质结tfet超快速仿真的模式空间紧密结合模型

2015 International Workshop on Computational Electronics (IWCE) Pub Date : 2015-11-13 DOI:10.1109/IWCE.2015.7301934

A. Afzalian, J. Huang, H. Ilatikhameneh, J. Charles, D. Lemus, J. Lopez, S. Perez Rubiano, T. Kubis, M. Povolotskyi, Gerhard Klimeck, M. Passlack, Y. Yeo

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引用次数: 7

摘要

我们在这里探讨了模式空间紧密结合算法对各种III-V型同质结和异质结纳米线器件的适用性。我们表明，在III-V材料中，要消除的非物理模式的数量与文献中先前报道的Si情况相比非常高。然而，我们在这里证明了从非物理模式中清除III-V模式空间基的可能性，并实现了显著的加速比(> 150x)，同时在使用该算法进行NEGF输运研究时保持了非常好的精度(相对误差低于1%)。这些结果证明了模式空间紧密结合模型的潜力，并为纳米结构的全波段模拟提供了前所未有的可能性。

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Mode space tight binding model for ultra-fast simulations of III-V nanowire MOSFETs and heterojunction TFETs

We explore here the suitability of a mode space tight binding algorithm to various III-V homo- and heterojunction nanowire devices. We show that in III-V materials, the number of unphysical modes to eliminate is very high compared to the Si case previously reported in the literature. Nevertheless, we demonstrate here the possibility to clean III-V mode space basis from the unphysical modes and achieve a significant speed up ratio (>150×), while keeping a very good accuracy (relative error lower than 1%) when using the algorithm for NEGF transport studies. Such results demonstrate the potential of mode space tight binding models and offer unprecedented possibilities for the full band simulation of nanostructures.

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2015 International Workshop on Computational Electronics (IWCE)

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