{"title":"一种用于高频开关的新型硅侧沟功率MOSFET电路仿真模型","authors":"K. Varadarajan, S. Sinkar, T. Chow","doi":"10.1109/COMPEL.2006.305631","DOIUrl":null,"url":null,"abstract":"In this paper, we present a novel integrable 80 V silicon lateral trench power MOSFET together with its circuit simulation model. The lateral trench power MOSFET exhibits a low figure of merit (Ron times Qg) proving very attractive for high frequency switching applications. The lateral trench power MOSFET was initially simulated using the 2-D device simulator MEDICI, and an analytical model was developed and implemented in MAST HDL for use in circuit simulators such as SABER. Circuit simulations were performed using the model developed and high frequency switching performance of the proposed device is compared against a commercial device","PeriodicalId":210889,"journal":{"name":"2006 IEEE Workshops on Computers in Power Electronics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"A Circuit Simulation Model of a Novel Silicon Lateral Trench Power MOSFET for High Frequency Switching Applications\",\"authors\":\"K. Varadarajan, S. Sinkar, T. Chow\",\"doi\":\"10.1109/COMPEL.2006.305631\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we present a novel integrable 80 V silicon lateral trench power MOSFET together with its circuit simulation model. The lateral trench power MOSFET exhibits a low figure of merit (Ron times Qg) proving very attractive for high frequency switching applications. The lateral trench power MOSFET was initially simulated using the 2-D device simulator MEDICI, and an analytical model was developed and implemented in MAST HDL for use in circuit simulators such as SABER. Circuit simulations were performed using the model developed and high frequency switching performance of the proposed device is compared against a commercial device\",\"PeriodicalId\":210889,\"journal\":{\"name\":\"2006 IEEE Workshops on Computers in Power Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-07-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE Workshops on Computers in Power Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMPEL.2006.305631\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Workshops on Computers in Power Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMPEL.2006.305631","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Circuit Simulation Model of a Novel Silicon Lateral Trench Power MOSFET for High Frequency Switching Applications
In this paper, we present a novel integrable 80 V silicon lateral trench power MOSFET together with its circuit simulation model. The lateral trench power MOSFET exhibits a low figure of merit (Ron times Qg) proving very attractive for high frequency switching applications. The lateral trench power MOSFET was initially simulated using the 2-D device simulator MEDICI, and an analytical model was developed and implemented in MAST HDL for use in circuit simulators such as SABER. Circuit simulations were performed using the model developed and high frequency switching performance of the proposed device is compared against a commercial device
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