{"title":"GaAs E-pHEMT中1.6-2.2GHz低噪声高增益双放大器的设计与性能","authors":"T. Chong, S. Rendava","doi":"10.1109/APMC.2005.1606596","DOIUrl":null,"url":null,"abstract":"The design and realization of a dual low-noise amplifier (LNA) module in the 2GHz band suitable for balanced receiver front-end application is presented. The module was designed to operate from a 5V supply with a control voltage for convenient adjustment of bias condition for optimum noise figure. The MMIC portion of the design was fabricated in Agilent Technologies' proprietary 0.5/spl mu/m GaAs enhancement-mode pseudomorphic high-electron-mobility transistor (e-pHEMT) process. This module is suitable for balanced amplifier applications when combined with external 3-dB hybrids, giving an extremely low noise figure (NF) of 0.55-0.8dB, coupled with a moderately high OIP3 (output third order intercept point) of 38-42dBm at 28-32dB gain. It is also capable of delivering a P-1dB of more than 20dBm at 180mA current drain.","PeriodicalId":253574,"journal":{"name":"2005 Asia-Pacific Microwave Conference Proceedings","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Design and performance of a 1.6-2.2GHz low-noise, high gain dual amplifier in GaAs E-pHEMT\",\"authors\":\"T. Chong, S. Rendava\",\"doi\":\"10.1109/APMC.2005.1606596\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design and realization of a dual low-noise amplifier (LNA) module in the 2GHz band suitable for balanced receiver front-end application is presented. The module was designed to operate from a 5V supply with a control voltage for convenient adjustment of bias condition for optimum noise figure. The MMIC portion of the design was fabricated in Agilent Technologies' proprietary 0.5/spl mu/m GaAs enhancement-mode pseudomorphic high-electron-mobility transistor (e-pHEMT) process. This module is suitable for balanced amplifier applications when combined with external 3-dB hybrids, giving an extremely low noise figure (NF) of 0.55-0.8dB, coupled with a moderately high OIP3 (output third order intercept point) of 38-42dBm at 28-32dB gain. It is also capable of delivering a P-1dB of more than 20dBm at 180mA current drain.\",\"PeriodicalId\":253574,\"journal\":{\"name\":\"2005 Asia-Pacific Microwave Conference Proceedings\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 Asia-Pacific Microwave Conference Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APMC.2005.1606596\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 Asia-Pacific Microwave Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APMC.2005.1606596","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design and performance of a 1.6-2.2GHz low-noise, high gain dual amplifier in GaAs E-pHEMT
The design and realization of a dual low-noise amplifier (LNA) module in the 2GHz band suitable for balanced receiver front-end application is presented. The module was designed to operate from a 5V supply with a control voltage for convenient adjustment of bias condition for optimum noise figure. The MMIC portion of the design was fabricated in Agilent Technologies' proprietary 0.5/spl mu/m GaAs enhancement-mode pseudomorphic high-electron-mobility transistor (e-pHEMT) process. This module is suitable for balanced amplifier applications when combined with external 3-dB hybrids, giving an extremely low noise figure (NF) of 0.55-0.8dB, coupled with a moderately high OIP3 (output third order intercept point) of 38-42dBm at 28-32dB gain. It is also capable of delivering a P-1dB of more than 20dBm at 180mA current drain.
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