A Single-Event Parasitic Inductance Characterization Method Based on Parallel Resonance Principle for Power Modules

Dynamic characteristics of power modules are significantly influenced by the parasitic parameters, especially parasitic inductance. Accordingly, more attention has been paid to measuring parasitic inductance extensively. However, the existing methods also have corresponding limitations, such as inadequate accuracy, complex measurement, and poor repeatability. Thus, a parasitic inductance extraction method for the arbitrary power flow path based on the parallel resonance principle is proposed in this paper. Compared with the methods proposed previously, the parasitic inductance can be extracted by only measuring the voltage of the parallel capacitor, which is a low-voltage and low-frequency damped oscillation attenuation signal. Finally, experimental results validate the effectiveness of the proposed method in measuring the parasitic inductance of the terminals of the silicon carbide power module.