汽车NMOS LDO反极性保护

P. Pop, Gabriel Petrasuc, C. Pleşa, M. Neag, T. Salajan
{"title":"汽车NMOS LDO反极性保护","authors":"P. Pop, Gabriel Petrasuc, C. Pleşa, M. Neag, T. Salajan","doi":"10.1109/CAS52836.2021.9604200","DOIUrl":null,"url":null,"abstract":"ICs designed for automotive applications should withstand accidental reverse polarity caused by misconnection of their supply lines to the car battery. The reverse protection circuitry should avoid damages to both the IC and the system the IC is connected to. In particular, a large power dissipation while in reverse polarity situation is to be avoided. A simple solution is to insert diodes between the supply lines and the IC supply pins but this cannot be applied to linear low dropout regulators (LDOs)This paper presents two reverse polarity protection solutions for LDOs with NMOS power transistors. Starting from a circuit based on bipolar transistors, the proposed solutions can be implemented in low-cost CMOS processes. One of them also requires far less die-area Simulation results presented in the paper validate both proposals.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Reverse polarity protection for automotive NMOS LDO\",\"authors\":\"P. Pop, Gabriel Petrasuc, C. Pleşa, M. Neag, T. Salajan\",\"doi\":\"10.1109/CAS52836.2021.9604200\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"ICs designed for automotive applications should withstand accidental reverse polarity caused by misconnection of their supply lines to the car battery. The reverse protection circuitry should avoid damages to both the IC and the system the IC is connected to. In particular, a large power dissipation while in reverse polarity situation is to be avoided. A simple solution is to insert diodes between the supply lines and the IC supply pins but this cannot be applied to linear low dropout regulators (LDOs)This paper presents two reverse polarity protection solutions for LDOs with NMOS power transistors. Starting from a circuit based on bipolar transistors, the proposed solutions can be implemented in low-cost CMOS processes. One of them also requires far less die-area Simulation results presented in the paper validate both proposals.\",\"PeriodicalId\":281480,\"journal\":{\"name\":\"2021 International Semiconductor Conference (CAS)\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 International Semiconductor Conference (CAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CAS52836.2021.9604200\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAS52836.2021.9604200","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

为汽车应用设计的集成电路应该能够承受因电源线与汽车电池连接错误而导致的意外反极性。反向保护电路应避免损坏集成电路和集成电路所连接的系统。特别是,在反极性情况下,要避免大的功耗。一种简单的解决方案是在供电线路和IC供电引脚之间插入二极管,但这不适用于线性低差稳压器(ldo)。本文提出了两种具有NMOS功率晶体管的ldo反极性保护方案。从基于双极晶体管的电路开始,所提出的解决方案可以在低成本的CMOS工艺中实现。其中一种方法所需的模面积也小得多,本文的仿真结果验证了这两种方法的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Reverse polarity protection for automotive NMOS LDO
ICs designed for automotive applications should withstand accidental reverse polarity caused by misconnection of their supply lines to the car battery. The reverse protection circuitry should avoid damages to both the IC and the system the IC is connected to. In particular, a large power dissipation while in reverse polarity situation is to be avoided. A simple solution is to insert diodes between the supply lines and the IC supply pins but this cannot be applied to linear low dropout regulators (LDOs)This paper presents two reverse polarity protection solutions for LDOs with NMOS power transistors. Starting from a circuit based on bipolar transistors, the proposed solutions can be implemented in low-cost CMOS processes. One of them also requires far less die-area Simulation results presented in the paper validate both proposals.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信