{"title":"一种降低脉宽调制升压变换器开关损耗的新技术","authors":"Y. Jang, M. Jovanovic","doi":"10.1109/PESC.1999.785632","DOIUrl":null,"url":null,"abstract":"A circuit technique that reduces switching losses of the pulse-width-modulated boost converter is described. The losses are reduced by using a new switch cell that consists of an inductor, a diode, a capacitor, a main switch, and an auxiliary switch. This technique reduces the reverse-recovery-related losses of the rectifier with the inductor that controls the di/dt rate of the rectifier during its turn-off. In addition, the main switch turns off at zero current, while the auxiliary switch turns on at zero voltage. Due to the zero-current switching of the main switch, this technique is particularly suitable for boost converter implementations with insulated-gate bipolar transistors.","PeriodicalId":292317,"journal":{"name":"30th Annual IEEE Power Electronics Specialists Conference. Record. (Cat. No.99CH36321)","volume":"221 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A new technique for reducing switching losses in pulse-width-modulated boost converter\",\"authors\":\"Y. Jang, M. Jovanovic\",\"doi\":\"10.1109/PESC.1999.785632\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A circuit technique that reduces switching losses of the pulse-width-modulated boost converter is described. The losses are reduced by using a new switch cell that consists of an inductor, a diode, a capacitor, a main switch, and an auxiliary switch. This technique reduces the reverse-recovery-related losses of the rectifier with the inductor that controls the di/dt rate of the rectifier during its turn-off. In addition, the main switch turns off at zero current, while the auxiliary switch turns on at zero voltage. Due to the zero-current switching of the main switch, this technique is particularly suitable for boost converter implementations with insulated-gate bipolar transistors.\",\"PeriodicalId\":292317,\"journal\":{\"name\":\"30th Annual IEEE Power Electronics Specialists Conference. Record. (Cat. No.99CH36321)\",\"volume\":\"221 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-06-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"30th Annual IEEE Power Electronics Specialists Conference. Record. (Cat. No.99CH36321)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PESC.1999.785632\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"30th Annual IEEE Power Electronics Specialists Conference. Record. (Cat. No.99CH36321)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1999.785632","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new technique for reducing switching losses in pulse-width-modulated boost converter
A circuit technique that reduces switching losses of the pulse-width-modulated boost converter is described. The losses are reduced by using a new switch cell that consists of an inductor, a diode, a capacitor, a main switch, and an auxiliary switch. This technique reduces the reverse-recovery-related losses of the rectifier with the inductor that controls the di/dt rate of the rectifier during its turn-off. In addition, the main switch turns off at zero current, while the auxiliary switch turns on at zero voltage. Due to the zero-current switching of the main switch, this technique is particularly suitable for boost converter implementations with insulated-gate bipolar transistors.