{"title":"4.2K的硅射频单电子晶体管","authors":"S. J. Angus, A. Ferguson, A. Dzurak, R. G. Clark","doi":"10.1109/ICONN.2008.4639267","DOIUrl":null,"url":null,"abstract":"We report the demonstration at 4.2K of a silicon radio-frequency single electron transistor (rf-SET) fabricated in a complementary metal-oxide-semiconductor (CMOS) compatible architecture. Charge sensitivities of better than 10mue/radicHz are demonstrated at MHz bandwidth at mK, and charge sensitivity of the order 20mue/radicHz is achieved at 4K. These results demonstrate that silicon may be used to fabricate fast, sensitive electrometers for use at 4.2K.","PeriodicalId":192889,"journal":{"name":"2008 International Conference on Nanoscience and Nanotechnology","volume":"80 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A silicon radio-frequency single electron transistor at 4.2K\",\"authors\":\"S. J. Angus, A. Ferguson, A. Dzurak, R. G. Clark\",\"doi\":\"10.1109/ICONN.2008.4639267\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the demonstration at 4.2K of a silicon radio-frequency single electron transistor (rf-SET) fabricated in a complementary metal-oxide-semiconductor (CMOS) compatible architecture. Charge sensitivities of better than 10mue/radicHz are demonstrated at MHz bandwidth at mK, and charge sensitivity of the order 20mue/radicHz is achieved at 4K. These results demonstrate that silicon may be used to fabricate fast, sensitive electrometers for use at 4.2K.\",\"PeriodicalId\":192889,\"journal\":{\"name\":\"2008 International Conference on Nanoscience and Nanotechnology\",\"volume\":\"80 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 International Conference on Nanoscience and Nanotechnology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICONN.2008.4639267\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Conference on Nanoscience and Nanotechnology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICONN.2008.4639267","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A silicon radio-frequency single electron transistor at 4.2K
We report the demonstration at 4.2K of a silicon radio-frequency single electron transistor (rf-SET) fabricated in a complementary metal-oxide-semiconductor (CMOS) compatible architecture. Charge sensitivities of better than 10mue/radicHz are demonstrated at MHz bandwidth at mK, and charge sensitivity of the order 20mue/radicHz is achieved at 4K. These results demonstrate that silicon may be used to fabricate fast, sensitive electrometers for use at 4.2K.
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