一种新型的高增益和低噪声CMOS混频器，具有完全集成的esd保护

2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS) Pub Date : 2012-09-05 DOI:10.1109/MWSCAS.2012.6291952

R. Salmeh

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引用次数: 0

摘要

介绍了一种在双平衡混合器设计中降低压头空间要求的创新方法。设计了一种新型的高增益、低噪声、低功耗、全集成ESD保护的CMOS混频器。该混频器采用ST 90nm CMOS技术，封装在QFN封装中。该混频器的工作频率为1.575 GHz，主要用于GPS前端接收机。

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A novel high gain and low noise figure CMOS mixer with fully integrated esd protection

A creative method to reduce the voltage head room requirement in the design of double balanced mixer is introduced. Design of a novel high gain, low noise figure and low power CMOS mixer with fully integrated ESD protection is presented. The mixer was implemented in ST 90nm CMOS technology and was packed in a QFN package. With an operating frequency of 1.575 GHz this mixer was targeted for GPS front-end receiver application.

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2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS)

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