基于极化结概念的氮化镓基双向超高压场效应管

2012 24th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2012-06-03 DOI:10.1109/ISPSD.2012.6229074

A. Nakajima, Y. Sumida, H. Kawai, V. Unni, K. Menon, M. H. Dhyani, E. Narayanan

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引用次数: 15

摘要

本文首次展示了基于极化结(PJ)概念的GaN基双向超异质结场效应晶体管(bishfet)。所制备的bishfet阵列在蓝宝石绝缘体衬底上，器件之间的隔离电压测量值大于2kv。制备的具有MES和PN栅极结构的bishfet在两个方向上的导通电阻分别为24 Ωmm和22 Ωmm。

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GaN-based bidirectional Super HFETs Using polarization junction concept on insulator substrate

GaN based bidirectional Super Heterojunction Field Effect Transistors (BiSHFETs) using the polarization junction (PJ) concept are demonstrated for the first time. The fabricated BiSHFETs are arrayed on an insulator substrate of Sapphire and measured isolation voltage between the devices is more than 2 kV. Measured on-resistances of the fabricated BiSHFETs with MES and PN gate structures are 24 Ωmm and 22 Ωmm in the both directions respectively.

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2012 24th International Symposium on Power Semiconductor Devices and ICs

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