非对称振线谐振器的设计及其在功率放大器中的应用

2008 IEEE MTT-S International Microwave Workshop Series on Art of Miniaturizing RF and Microwave Passive Components Pub Date : 2008-12-01 DOI:10.1109/IMWS.2008.4782285

Haiwen Liu, F. Tong, Xiaohua Li

{"title":"非对称振线谐振器的设计及其在功率放大器中的应用","authors":"Haiwen Liu, F. Tong, Xiaohua Li","doi":"10.1109/IMWS.2008.4782285","DOIUrl":null,"url":null,"abstract":"An improved spurline structure with two rejection bands is presented in this paper, which consists of asymmetrical spurline resonators and embedded directly into microstrip line. Asymmetrical spurline resonators provide dual-bandgap characteristics and slow-wave effect. Furthermore, asymmetrical spurline structure with dual rejection bands is proposed to reduce the higher harmonics of microwave power amplifiers. To evaluate the effect of asymmetrical spurline resonators on microwave amplifiers, two InGaP HBT power amplifiers were designed and fabricated. One of them has asymmetrical spurline structure at the output section, while the other has a conventional 50-Omega microstrip line only. Results show that asymmetrical spurline structure suppresses the second and third harmonics more than 27 dB at the output and yields improved power added efficiency (PAE) and output power by 6-8% and 1-4%, respectively.","PeriodicalId":257679,"journal":{"name":"2008 IEEE MTT-S International Microwave Workshop Series on Art of Miniaturizing RF and Microwave Passive Components","volume":"65 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Asymmetrical Spurline Resonator Design and its Application to Power Amplifiers\",\"authors\":\"Haiwen Liu, F. Tong, Xiaohua Li\",\"doi\":\"10.1109/IMWS.2008.4782285\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An improved spurline structure with two rejection bands is presented in this paper, which consists of asymmetrical spurline resonators and embedded directly into microstrip line. Asymmetrical spurline resonators provide dual-bandgap characteristics and slow-wave effect. Furthermore, asymmetrical spurline structure with dual rejection bands is proposed to reduce the higher harmonics of microwave power amplifiers. To evaluate the effect of asymmetrical spurline resonators on microwave amplifiers, two InGaP HBT power amplifiers were designed and fabricated. One of them has asymmetrical spurline structure at the output section, while the other has a conventional 50-Omega microstrip line only. Results show that asymmetrical spurline structure suppresses the second and third harmonics more than 27 dB at the output and yields improved power added efficiency (PAE) and output power by 6-8% and 1-4%, respectively.\",\"PeriodicalId\":257679,\"journal\":{\"name\":\"2008 IEEE MTT-S International Microwave Workshop Series on Art of Miniaturizing RF and Microwave Passive Components\",\"volume\":\"65 3\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE MTT-S International Microwave Workshop Series on Art of Miniaturizing RF and Microwave Passive Components\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMWS.2008.4782285\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE MTT-S International Microwave Workshop Series on Art of Miniaturizing RF and Microwave Passive Components","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMWS.2008.4782285","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 9

摘要

本文提出了一种改进的双抑制带马刺线结构，该结构由非对称马刺线谐振器组成，并直接嵌入微带线中。非对称脉冲线谐振器具有双带隙特性和慢波效应。此外，提出了双抑制带的非对称杂散线结构来降低微波功率放大器的高次谐波。为了评估非对称激励线谐振腔对微波放大器的影响，设计并制作了两个InGaP HBT功率放大器。其中一个在输出部分具有不对称的马刺线结构，而另一个只有传统的50-Omega微带线。结果表明，非对称的杂散线结构抑制了输出端大于27 dB的二次谐波和三次谐波，功率附加效率(PAE)和输出功率分别提高了6-8%和1-4%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Asymmetrical Spurline Resonator Design and its Application to Power Amplifiers

An improved spurline structure with two rejection bands is presented in this paper, which consists of asymmetrical spurline resonators and embedded directly into microstrip line. Asymmetrical spurline resonators provide dual-bandgap characteristics and slow-wave effect. Furthermore, asymmetrical spurline structure with dual rejection bands is proposed to reduce the higher harmonics of microwave power amplifiers. To evaluate the effect of asymmetrical spurline resonators on microwave amplifiers, two InGaP HBT power amplifiers were designed and fabricated. One of them has asymmetrical spurline structure at the output section, while the other has a conventional 50-Omega microstrip line only. Results show that asymmetrical spurline structure suppresses the second and third harmonics more than 27 dB at the output and yields improved power added efficiency (PAE) and output power by 6-8% and 1-4%, respectively.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2008 IEEE MTT-S International Microwave Workshop Series on Art of Miniaturizing RF and Microwave Passive Components

自引率

0.00%

发文量