基于最坏情况功耗特征的CMOS电路稳健性测试采用ATE和GA-MIE技术

E. Liau, D. Schmitt-Landsiedel
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引用次数: 0

摘要

本文提出了一种应用于工业半导体ATE的电路鲁棒性分析的诊断方法,并将遗传算法(GA)与一种新的多个体(染色体)进化(GA- mie)技术相结合。本文中的鲁棒性一词是指具有多个不确定源的电路的稳定性和性能。目标是根据一组最坏情况输入测试的最坏情况功耗特征来研究芯片上的最坏情况活动。测试是指输入模式和测试条件,因为CMOS电路的活度是输入测试和工作参数的复杂函数。例如,芯片上的时序和电压水平可以由于输入时序和电压水平的微小变化而变化。传统的测试和分析方法没有考虑测试条件的变化。测试芯片上的实验结果显示,在最坏的情况下,使用我们的方法生成的主动测试会导致设备运行速度比使用典型方法的正常测试慢。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Robustness test of CMOS circuit based on its worst case power consumption signature using ATE and GA-MIE technique
This paper presents a diagnosis method which works with industrial semiconductor ATE for analyzing the robustness of the circuit and uses genetic algorithm (GA) with a novel multiple individuals (chromosomes) evolution (GA-MIE) technique. The term robustness in this paper refers to stability and performance of circuits with multiple sources of uncertainties. The objective is studying the worst case activity on chip based on its worst case power consumption signature with respect to a set of worst case input tests. Tests are referred to input patterns and test conditions, since the activity of CMOS circuit is a complex function of the input tests and operating parameters. For instance, the timing and voltage levels on chip can vary due to a small variation of input timing and voltage level. Traditional test and analysis approaches do not consider test condition variation. Experimental results on a test chip show the worst case active tests generated with our approach provoke the device to run slower than normal tests using typical approaches.
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