{"title":"光晕植入物不同倾角对亚100nm LAC mosfet性能的影响","authors":"P. Sarkar, A. Mallik, C. Sarkar, V. Ramgopal Rao","doi":"10.1109/ICIIS.2006.365647","DOIUrl":null,"url":null,"abstract":"In this paper we systematically investigate the effects of the varying tilt angle of the halo implants on the different device performance parameters of 100 nm lateral asymmetric channel (LAC) MOSFETs. The tilt angle is varied from 5deg to 60deg with twist angle 0deg. Substantial reduction of sub-threshold swing is found for large tilt angles as compared to low angles of halo implant. The device structure, known as lateral asymmetric channel with large angle tilt implant (LACLATI), exhibits better reverse short channel effect and I on/Ioff, and lower junction capacitance","PeriodicalId":122994,"journal":{"name":"First International Conference on Industrial and Information Systems","volume":"108 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"The Effects of Varying Tilt Angle of Halo Implant on the Performance of Sub 100nm LAC MOSFETs\",\"authors\":\"P. Sarkar, A. Mallik, C. Sarkar, V. Ramgopal Rao\",\"doi\":\"10.1109/ICIIS.2006.365647\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we systematically investigate the effects of the varying tilt angle of the halo implants on the different device performance parameters of 100 nm lateral asymmetric channel (LAC) MOSFETs. The tilt angle is varied from 5deg to 60deg with twist angle 0deg. Substantial reduction of sub-threshold swing is found for large tilt angles as compared to low angles of halo implant. The device structure, known as lateral asymmetric channel with large angle tilt implant (LACLATI), exhibits better reverse short channel effect and I on/Ioff, and lower junction capacitance\",\"PeriodicalId\":122994,\"journal\":{\"name\":\"First International Conference on Industrial and Information Systems\",\"volume\":\"108 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"First International Conference on Industrial and Information Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIIS.2006.365647\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"First International Conference on Industrial and Information Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIIS.2006.365647","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Effects of Varying Tilt Angle of Halo Implant on the Performance of Sub 100nm LAC MOSFETs
In this paper we systematically investigate the effects of the varying tilt angle of the halo implants on the different device performance parameters of 100 nm lateral asymmetric channel (LAC) MOSFETs. The tilt angle is varied from 5deg to 60deg with twist angle 0deg. Substantial reduction of sub-threshold swing is found for large tilt angles as compared to low angles of halo implant. The device structure, known as lateral asymmetric channel with large angle tilt implant (LACLATI), exhibits better reverse short channel effect and I on/Ioff, and lower junction capacitance
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