具有两级横向溢流集成沟槽电容的超过120dB动态范围线性响应单曝光CMOS图像传感器

Imaging Sensors and Systems Pub Date : 2020-01-26 DOI:10.2352/issn.2470-1173.2020.7.iss-143

Y. Fujihara, M. Murata, Shota Nakayama, R. Kuroda, S. Sugawa

{"title":"具有两级横向溢流集成沟槽电容的超过120dB动态范围线性响应单曝光CMOS图像传感器","authors":"Y. Fujihara, M. Murata, Shota Nakayama, R. Kuroda, S. Sugawa","doi":"10.2352/issn.2470-1173.2020.7.iss-143","DOIUrl":null,"url":null,"abstract":"\n This paper presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration trench capacitors (LOFITreCs) exhibiting over 120dB dynamic range with 11.4Me- full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70dB. The\n measured SNR at all switching points were over 35dB thanks to the proposed two-stage LOFITreCs.\n","PeriodicalId":121190,"journal":{"name":"Imaging Sensors and Systems","volume":"219 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-01-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"An Over 120dB Dynamic Range Linear Response Single Exposure CMOS Image Sensor with Two-stage Lateral Overflow Integration Trench Capacitors\",\"authors\":\"Y. Fujihara, M. Murata, Shota Nakayama, R. Kuroda, S. Sugawa\",\"doi\":\"10.2352/issn.2470-1173.2020.7.iss-143\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n This paper presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration trench capacitors (LOFITreCs) exhibiting over 120dB dynamic range with 11.4Me- full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70dB. The\\n measured SNR at all switching points were over 35dB thanks to the proposed two-stage LOFITreCs.\\n\",\"PeriodicalId\":121190,\"journal\":{\"name\":\"Imaging Sensors and Systems\",\"volume\":\"219 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-01-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Imaging Sensors and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.2352/issn.2470-1173.2020.7.iss-143\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Imaging Sensors and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.2352/issn.2470-1173.2020.7.iss-143","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

本文介绍了一种具有两级横向溢流集成沟槽电容(LOFITreCs)的线性响应单曝光CMOS图像传感器原型，其动态范围超过120dB，满阱容量(FWC)为11.4Me，最大信噪比(SNR)为70dB。由于所提出的两级LOFITreCs，所有开关点的测量信噪比都超过35dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An Over 120dB Dynamic Range Linear Response Single Exposure CMOS Image Sensor with Two-stage Lateral Overflow Integration Trench Capacitors

This paper presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration trench capacitors (LOFITreCs) exhibiting over 120dB dynamic range with 11.4Me- full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70dB. The measured SNR at all switching points were over 35dB thanks to the proposed two-stage LOFITreCs.

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Imaging Sensors and Systems

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