{"title":"大范围动态V-F标度的能量-速度探索","authors":"Kleber Stangherlin, S. Bampi","doi":"10.1109/SBCCI.2013.6644884","DOIUrl":null,"url":null,"abstract":"Minimum-energy operation of digital CMOS circuits is commonly associated to the sub-VT regime, carrying huge performance and variability penalties. This paper shows that it is possible to achieve 8x higher energy-efficiency with a very-wide range of dynamic voltage-frequency scaling, from nominal voltages down to the lower boundary of near-VT operation. The cell-library is exercised in a 65nm commercial PDK and targets near-VT operation, mitigating the variability effects without compromising the design in terms of area and energy at strong inversion. The set of cells allows a maximum of 2-stacked transistors, and includes master-slave registers. We report results for medium complexity designs which include a 25kgates notch filter, a 20kgates 8051 compatible core, and 4-combinational/4-sequential ISCAS benchmark circuits. In this work the maximum frequency attainable at each supply for a wide variation of voltage is studied from 150mV up to nominal voltage (1.2V). The sub-VT operation is shown to hold the minimum energy-point at roughly 0.29V, which represents a 2x energy-saving compared to the near-VT regime. Although energy-efficiency peaks in sub-VT for the circuits studied, we also show that in this ultra-low Vdd the circuit timing and power suffer from substantially increased variability impact and a 30x performance drawback, with respect to near-VT.","PeriodicalId":203604,"journal":{"name":"2013 26th Symposium on Integrated Circuits and Systems Design (SBCCI)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Energy-speed exploration for very-wide range of dynamic V-F scaling\",\"authors\":\"Kleber Stangherlin, S. Bampi\",\"doi\":\"10.1109/SBCCI.2013.6644884\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Minimum-energy operation of digital CMOS circuits is commonly associated to the sub-VT regime, carrying huge performance and variability penalties. This paper shows that it is possible to achieve 8x higher energy-efficiency with a very-wide range of dynamic voltage-frequency scaling, from nominal voltages down to the lower boundary of near-VT operation. The cell-library is exercised in a 65nm commercial PDK and targets near-VT operation, mitigating the variability effects without compromising the design in terms of area and energy at strong inversion. The set of cells allows a maximum of 2-stacked transistors, and includes master-slave registers. We report results for medium complexity designs which include a 25kgates notch filter, a 20kgates 8051 compatible core, and 4-combinational/4-sequential ISCAS benchmark circuits. In this work the maximum frequency attainable at each supply for a wide variation of voltage is studied from 150mV up to nominal voltage (1.2V). The sub-VT operation is shown to hold the minimum energy-point at roughly 0.29V, which represents a 2x energy-saving compared to the near-VT regime. Although energy-efficiency peaks in sub-VT for the circuits studied, we also show that in this ultra-low Vdd the circuit timing and power suffer from substantially increased variability impact and a 30x performance drawback, with respect to near-VT.\",\"PeriodicalId\":203604,\"journal\":{\"name\":\"2013 26th Symposium on Integrated Circuits and Systems Design (SBCCI)\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 26th Symposium on Integrated Circuits and Systems Design (SBCCI)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SBCCI.2013.6644884\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 26th Symposium on Integrated Circuits and Systems Design (SBCCI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBCCI.2013.6644884","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Energy-speed exploration for very-wide range of dynamic V-F scaling
Minimum-energy operation of digital CMOS circuits is commonly associated to the sub-VT regime, carrying huge performance and variability penalties. This paper shows that it is possible to achieve 8x higher energy-efficiency with a very-wide range of dynamic voltage-frequency scaling, from nominal voltages down to the lower boundary of near-VT operation. The cell-library is exercised in a 65nm commercial PDK and targets near-VT operation, mitigating the variability effects without compromising the design in terms of area and energy at strong inversion. The set of cells allows a maximum of 2-stacked transistors, and includes master-slave registers. We report results for medium complexity designs which include a 25kgates notch filter, a 20kgates 8051 compatible core, and 4-combinational/4-sequential ISCAS benchmark circuits. In this work the maximum frequency attainable at each supply for a wide variation of voltage is studied from 150mV up to nominal voltage (1.2V). The sub-VT operation is shown to hold the minimum energy-point at roughly 0.29V, which represents a 2x energy-saving compared to the near-VT regime. Although energy-efficiency peaks in sub-VT for the circuits studied, we also show that in this ultra-low Vdd the circuit timing and power suffer from substantially increased variability impact and a 30x performance drawback, with respect to near-VT.