{"title":"lpe生长的GaSb量子点的表面形貌","authors":"Yang Wang, Shuhong Hu, Y. Lv, N. Dai","doi":"10.1117/12.2182638","DOIUrl":null,"url":null,"abstract":"The self-assembled type-II GaSb quantum dots (QDs) were successfully grown on semi-insulting GaAs (100) substrate by the liquid phase epitaxy (LPE) technique with growth temperature ranging from 520 to 580 oC. The morphology of GaSb QDs including size, shape and density was investigated by atomic force microscopy measurement and scanning electron microscope measurement, respectively. The cap layer with scores of nanometers, which is characterized by Profile-system, is obtained for the photoluminescence measurement and device fabrication.","PeriodicalId":225534,"journal":{"name":"Photoelectronic Technology Committee Conferences","volume":"327 3-4","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Surface morphology of LPE-growth GaSb quantum dots\",\"authors\":\"Yang Wang, Shuhong Hu, Y. Lv, N. Dai\",\"doi\":\"10.1117/12.2182638\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The self-assembled type-II GaSb quantum dots (QDs) were successfully grown on semi-insulting GaAs (100) substrate by the liquid phase epitaxy (LPE) technique with growth temperature ranging from 520 to 580 oC. The morphology of GaSb QDs including size, shape and density was investigated by atomic force microscopy measurement and scanning electron microscope measurement, respectively. The cap layer with scores of nanometers, which is characterized by Profile-system, is obtained for the photoluminescence measurement and device fabrication.\",\"PeriodicalId\":225534,\"journal\":{\"name\":\"Photoelectronic Technology Committee Conferences\",\"volume\":\"327 3-4\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-04-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Photoelectronic Technology Committee Conferences\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2182638\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Photoelectronic Technology Committee Conferences","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2182638","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Surface morphology of LPE-growth GaSb quantum dots
The self-assembled type-II GaSb quantum dots (QDs) were successfully grown on semi-insulting GaAs (100) substrate by the liquid phase epitaxy (LPE) technique with growth temperature ranging from 520 to 580 oC. The morphology of GaSb QDs including size, shape and density was investigated by atomic force microscopy measurement and scanning electron microscope measurement, respectively. The cap layer with scores of nanometers, which is characterized by Profile-system, is obtained for the photoluminescence measurement and device fabrication.
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