多集成电路源的辐射-发射影响

Val L. Erwin, K. Fischer
{"title":"多集成电路源的辐射-发射影响","authors":"Val L. Erwin, K. Fischer","doi":"10.1109/ISEMC.1985.7566913","DOIUrl":null,"url":null,"abstract":"An unaccep tab le increase in the rad ia ted emissions am plitudes of an e lectron ic d a ta processing product was a ttr ib u ted to m ultiple in teg ra ted -c ircu it (IC) sourcing. Conducted w aveform s genera ted by these devices on the data /add ress bus w ere m easured in the tim e domain. Emissions rad ia ted from various IC sources w ere m easured in the frequency domain a t an open-field te s t site . Interchanging ICs, even though of a sam e device type, had a significant im pact upon th e EMC profile.","PeriodicalId":256770,"journal":{"name":"1985 IEEE International Symposium on Electromagnetic Compatibility","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1985-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Radiated-Emission Ramifications of Multiple IC Sourcing\",\"authors\":\"Val L. Erwin, K. Fischer\",\"doi\":\"10.1109/ISEMC.1985.7566913\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An unaccep tab le increase in the rad ia ted emissions am plitudes of an e lectron ic d a ta processing product was a ttr ib u ted to m ultiple in teg ra ted -c ircu it (IC) sourcing. Conducted w aveform s genera ted by these devices on the data /add ress bus w ere m easured in the tim e domain. Emissions rad ia ted from various IC sources w ere m easured in the frequency domain a t an open-field te s t site . Interchanging ICs, even though of a sam e device type, had a significant im pact upon th e EMC profile.\",\"PeriodicalId\":256770,\"journal\":{\"name\":\"1985 IEEE International Symposium on Electromagnetic Compatibility\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1985-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1985 IEEE International Symposium on Electromagnetic Compatibility\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISEMC.1985.7566913\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1985 IEEE International Symposium on Electromagnetic Compatibility","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISEMC.1985.7566913","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

电子产品的辐射排放量和辐射强度出现了令人无法接受的大幅增加,而该加工产品的辐射排放量和辐射强度却出现了大幅增加,这与集成电路(ic)的采购有关。在数据/添加地址总线上对这些设备产生的波形进行时域测量。从不同的集成电路源发射的辐射在频域上进行了测量。交换ic,即使是相同的设备类型,也会对EMC配置文件产生重大影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Radiated-Emission Ramifications of Multiple IC Sourcing
An unaccep tab le increase in the rad ia ted emissions am plitudes of an e lectron ic d a ta processing product was a ttr ib u ted to m ultiple in teg ra ted -c ircu it (IC) sourcing. Conducted w aveform s genera ted by these devices on the data /add ress bus w ere m easured in the tim e domain. Emissions rad ia ted from various IC sources w ere m easured in the frequency domain a t an open-field te s t site . Interchanging ICs, even though of a sam e device type, had a significant im pact upon th e EMC profile.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信