功率GaN MOSFET栅极驱动器的研究

2022 13th National Conference with International Participation (ELECTRONICA) Pub Date : 2022-05-19 DOI:10.1109/ELECTRONICA55578.2022.9874434

D. Dankov, Petko Marinov

{"title":"功率GaN MOSFET栅极驱动器的研究","authors":"D. Dankov, Petko Marinov","doi":"10.1109/ELECTRONICA55578.2022.9874434","DOIUrl":null,"url":null,"abstract":"This paper discusses the properties and characteristics of two driver circuits for GaN MOSFET transistors. A study deals with driver circuits in terms of the fast switching performance of three types of MOSFET transistors: GaN, SiC and Si, and in terms of the efficiency of the driver circuits in the frequency range up to 1 MHz.","PeriodicalId":443994,"journal":{"name":"2022 13th National Conference with International Participation (ELECTRONICA)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study of Power GaN MOSFET Gate Drivers\",\"authors\":\"D. Dankov, Petko Marinov\",\"doi\":\"10.1109/ELECTRONICA55578.2022.9874434\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper discusses the properties and characteristics of two driver circuits for GaN MOSFET transistors. A study deals with driver circuits in terms of the fast switching performance of three types of MOSFET transistors: GaN, SiC and Si, and in terms of the efficiency of the driver circuits in the frequency range up to 1 MHz.\",\"PeriodicalId\":443994,\"journal\":{\"name\":\"2022 13th National Conference with International Participation (ELECTRONICA)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-05-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 13th National Conference with International Participation (ELECTRONICA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ELECTRONICA55578.2022.9874434\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 13th National Conference with International Participation (ELECTRONICA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ELECTRONICA55578.2022.9874434","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文讨论了两种GaN MOSFET晶体管驱动电路的性能和特点。本文研究了三种MOSFET晶体管(GaN, SiC和Si)的快速开关性能，以及高达1mhz频率范围内驱动电路的效率。

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Study of Power GaN MOSFET Gate Drivers

This paper discusses the properties and characteristics of two driver circuits for GaN MOSFET transistors. A study deals with driver circuits in terms of the fast switching performance of three types of MOSFET transistors: GaN, SiC and Si, and in terms of the efficiency of the driver circuits in the frequency range up to 1 MHz.

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2022 13th National Conference with International Participation (ELECTRONICA)

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