GaN HEMTs辐射硬度对TID的影响:用于恶劣环境的COTS

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI:10.1109/radecs47380.2019.9745697

A. Bôas, M. D. de Melo, R. Santos, R. Giacomini, N. Medina, L. Seixas, S. Finco, F. R. Palomo, A. Romero-Maestro, M. Guazzelli

{"title":"GaN HEMTs辐射硬度对TID的影响:用于恶劣环境的COTS","authors":"A. Bôas, M. D. de Melo, R. Santos, R. Giacomini, N. Medina, L. Seixas, S. Finco, F. R. Palomo, A. Romero-Maestro, M. Guazzelli","doi":"10.1109/radecs47380.2019.9745697","DOIUrl":null,"url":null,"abstract":"The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias-condition. Switching tests were performed before, during and after irradiation. The devices were characterized at temperatures ranging from −50°C to +75°C. The results indicate that the GaN-technology is a great candidate to be used in harsh environments.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Radiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments\",\"authors\":\"A. Bôas, M. D. de Melo, R. Santos, R. Giacomini, N. Medina, L. Seixas, S. Finco, F. R. Palomo, A. Romero-Maestro, M. Guazzelli\",\"doi\":\"10.1109/radecs47380.2019.9745697\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias-condition. Switching tests were performed before, during and after irradiation. The devices were characterized at temperatures ranging from −50°C to +75°C. The results indicate that the GaN-technology is a great candidate to be used in harsh environments.\",\"PeriodicalId\":269018,\"journal\":{\"name\":\"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/radecs47380.2019.9745697\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/radecs47380.2019.9745697","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

采用10kev x射线对GaN基COTS功率晶体管进行了TID效应暴露。这些hemt在开状态和关状态偏置条件下进行测试。在照射前、照射中和照射后分别进行开关试验。器件在−50°C至+75°C的温度范围内进行表征。结果表明，gan技术是在恶劣环境下应用的一个很好的候选技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Radiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments

The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias-condition. Switching tests were performed before, during and after irradiation. The devices were characterized at temperatures ranging from −50°C to +75°C. The results indicate that the GaN-technology is a great candidate to be used in harsh environments.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

自引率

0.00%

发文量