PZT薄膜体声波谐振器和滤波器

Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218) Pub Date : 2001-06-06 DOI:10.1109/FREQ.2001.956364

Paul B. Kirby, Q. Su, E. Komuro, Qi Zhang, Masaaki Imura, R. Whatmore

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引用次数: 21

摘要

采用锆钛酸铅(PZT)薄膜作为压电有源层的体声波谐振器(FBAR)由于具有较大的机电耦合系数，有利于压控振荡器和宽带滤波器的应用。本文报道了压电陶瓷fbar和滤波器的制备过程和结果。给出了温度系数和偏置电压的影响。

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PZT thin film bulk acoustic wave resonators and filters

Thin Film Bulk Acoustic Wave Resonators (FBAR) using Lead Zirconate Titanate (PZT) thin films as the piezoelectric active layer are favourable for voltage controlled oscillators and wide band filters due to the large electro-mechanical coupling coefficient of PZT. This paper reports the fabrication process and results of PZT FBARs and filters. The temperature coefficient and bias voltage effect are also presented.

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Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)

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