非晶硅基金属-绝缘体-半导体结构的电容-电压特性

Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium Pub Date : 1991-06-12 DOI:10.1109/UGIM.1991.148130

J.S. Choi, G. Neudeck

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引用次数: 0

摘要

提出了A - si: h基金属-绝缘体-半导体(MIS)结构的电容-电压模型，以及一种替代的直接测量方法。C-V模型是在静态I-V模型的基础上建立的，该静态I-V模型是用简化的CFO带隙模型和简化的Davis-Mott模型建立的。采用稍作改进的薄膜晶体管(TFT)，也用横向流动传输线模型来模拟所测导纳的频率变化。这些模型可用于监测tft制造参数并提取准确的电容模型参数。

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Capacitance-voltage characteristics of amorphous silicon based metal-insulator-semiconductor structure

A capacitance-voltage model for the a-Si:H-based metal-insulator-semiconductor (MIS) structure is presented, along with an alternative direct measurement method. The C-V model is based on the static I-V model developed using the simplified CFO band model for the a-Si bulk band gap states and the simplified Davis-Mott model for the surface states. The frequency variation of the measured admittance, using a somewhat modified thin-film transistor (TFT), is also modeled with the lateral flow transmission line model. These models can be used to monitor TFT-fabrication parameters and to extract accurate capacitance model parameters.<>

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Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium

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